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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Boca Semiconductor Corp. BSC http://www.bocasemi.com
BC 556, A, B BC 557, 8, A, B, C TO-92 EBC
APPLICATION PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL BC556 VCEO 65 Collector -Emitter Voltage VCES 80 Collector -Emitter Voltage VCBO 80 Collector -Base Voltage VEBO Emitter -Base Voltage IC Collector Current Continuous ICM Peak IBM Base Current -Peak IEM Emitter Current- Peak PTA Power Dissipation@ Ta=25 degC Derate Above 25 deg C Tstg Storage Temperature Tj Junction Temperature THERMAL RESISTANCE Rth(j-a) Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BC556 VCEO IC=2mA,IB=0 >65 Collector -Emitter Voltage VCBO IC=100uA.IE=0 >80 Collector -Base Voltage VEBO IE=100uA, IC=0 ALL Emitter-Base Voltage ICBO VCB=30V, IE=0 ALL Collector-Cut off Current Tj=150 deg C VCB=30V, IE=0 ALL VCE=80V, VBE=0 VCE=50V, VBE=0 VCE=30V, VBE=0 TJ=125 deg C VCE=80V, VBE=0 VCE=50V, VBE=0 VCE=30V, VBE=0 BC557 45 50 50 5.0 100 200 200 200 500 4.0 -65 to +150 150 BC558 30 30 30 UNITS V V V V mA mA mA mA mW mW/deg C deg C deg C
250 BC557 BC558 >45 >30 >50 >30 >5.0 <15
deg C/W UNITS V V V nA
<5.0 <15 <15 <15
ICES
uA nA nA nA
Collector-Cut off Current
ICES
<4.0 -
<4.0 -
<4.0
uA uA uA
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) BC556-558 DESCRIPTION SYMBOL TEST CONDITION VALUE hFE IC=10uA,VCE=5V typ90 DC Current Gain A typ150 B typ270 C IC=2mA,VCE=5V 75-475 BC556 75-800 BC557,8 110-220 A 200-450 B 420-800 C IC=100mA,VCE=5V typ120 A typ200 B typ400 C VCE(Sat) IC=10mA,IB=0.5mA <0.30 Collector Emitter Saturation Voltage IC=100mA,IB=5mA <0.65 VBE(Sat) IC=10mA,IB=0.5mA typ0.70 Base Emitter Saturation Voltage IC=100mA,IB=5mA typ0.90 VBE(on) IC=2mA,VCE=5V 0.55-0.70 Base Emitter on Voltage IC=10mA,VCE=5V <0.82 DYNAMIC CHARACTERISTICS ft IC=10mA, VCE=5V typ150 Transistors Frequency f=100MHz Ccbo VCB=10V, f=1MHz <6.0 Collector out-put Capacitance Cib VEB=0.5V, f=1MHz typ9.0 Emitter Input Capacitance NF IC=0.2mA, VCE=5V <10 Noise Figure Rs=2kohm, f=1kHZ B=200Hz ALL f=1KHz IC=2mA, VCE=5V
UNITS
V V V V V V MHz pF pF dB
Small Signal Current Gain
hfe
Input Impedance
hie
IC=2mA, VCE=5V
Voltage Feedback Ratio
hre
IC=2mA, VCE=5V
Out put Adimttance
hoe
IC=2mA, VCE=5V
A B C A B C A B C A B C
typ220 typ330 typ600 1.6-4.5 3.2-8.5 6.0-15 typ1.5 typ2.0 typ3.0 <30 <60 <110
khoms
X10-4
umhos
Boca Semiconductor Corp. BSC http://www.bocasemi.com
TO-92 Plastic Package
B
TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
M EC H AN IC AL D ATA Ad hesive Tape o n Top Side
P h A A1 (p)
FEE
D
C arrier Strip
A
h
T
321
H1 H0 L
LA BE L
FL AT SIDE 8.2"
W2
Wo W1 W
K
t1 t F1 F P2 Po F2 Do
1 3"
1 .7 7"
D 3 E 2 1
ITEM
Flat S id e o f Tra nsis tor and Ad hesive Tape V isible 20 00 pcs./A m m o P ack
All dim ensions in m m unless specified otherwise
SYM BO L A1 A T P Po SPEC IFICAT ION REM ARKS M IN. NO M . M AX. TO L . 4.8 4.0 5.2 4.8 4.2 3.9 12.7 1 12.7 0.3 CUM U LATIVE PIT CH ERRO R 1.0 m m /20 PITCH 6.35 0.4 TO BE M EASURED AT BOT TOM O F C LINCH +0.6 5.08 -0.2 0 1 AT TO P OF BODY 18 0.5 6 0.2 9 +0.7 -0.5 0.5 0.2 16 0.5 23.25 11.0 4 0.2 1.2 t1 0.3 - 0 .6 2.54 +0.4 -0.1 3 6N
D G
AA SEC AA
BOD Y W IDT H BOD Y H EIG HT BOD Y T HICKNESS PITCH OF COM PO NENT FEED HO LE PITCH
F
F
DIM A
MIN. 4.32 4.45 3.18 0.41 0.35
MAX. 5.33 5.20 4.19 0.55 0.50
FEED HO LE CENTR E TO CO M PONENT CENTR E DISTAN CE BET WEEN O UTER LEADS CO M PONENT ALIGN M EN T TAPE W IDTH HO LD-D OW N TAPE W IDT H HO LE PO SITIO N HO LD-D OW N TAPE PO SIT ION LEAD W IRE CLINCH H EIG HT CO M PONENT HEIGH T LENG TH O F SNIPPED LEAD S FEED HO LE DIAM ETER TO TAL TAPE TH ICKNESS LEAD - TO - LEAD DISTAN CEF1, CLINC H HEIGH T PULL - O UT FO RCE
P2 F h W Wo W1 W2 Ho H1 L Do t F2 H2 (P)
321
All diminsions in mm.
B C D E F G H K
H
C
PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR
5 DEG 1.14 1.40 1.14 1.53 12.70 --
N OT ES 1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T TO B E G R E AT E R T H A N 0 .2 m m . 2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0 P IT C H E S . 3 . H O L D D O W N TA P E N O T T O E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O E X P O S U R E O F A D H E S IV E . 4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D . 5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T. 6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S .
Boca Semiconductor Corp. BSC http://www.bocasemi.com

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